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PD -5038
PRELIMINARY
CPV363M4F
Fast IGBT
1 D1 9 4 6 Q2 D2 12 Q4 D4 18 D3 15 10 Q6 D6 D5 16 3 Q1 Q3 Q5
IGBT SIP MODULE
Features
* Fully isolated printed circuit board mount package * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve
Product Summary
7 13 Output Current in a Typical 5.0 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90C, T J = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2
Absolute Maximum Ratings
Parameter
VCES I C @ T C = 25C I C @ T C = 100C I CM I LM I F @ TC = 100C I FM VGE VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 16 8.7 50 50 6.1 50 20 2500 36 14 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m)
Units
V
A
V VRMS W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module
Typ.
--- --- 0.10 20 (0.7)
Max.
3.5 5.5 --- ---
Units
C/W g (oz)
1/21/97
CPV363M4F
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Collector-to-Emitter Breakdown Voltage 600 Temperature Coeff. of Breakdown Voltage --- Collector-to-Emitter Saturation Voltage --- --- --- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage --- Forward Transconductance 6.0 Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current ---
Typ. --- 0.69 1.37 1.63 1.37 --- -11 8.0 --- --- 1.3 1.2 ---
Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 1.5 IC = 8.7A VGE = 15V See Fig. 2, 5 --- V IC = 16A --- IC = 8.7A, TJ = 150C 6.0 VCE = VGE , IC = 250A --- mV/C VCE = VGE , IC = 250A --- S VCE = 100V, IC = 8.7A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Charge Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 54 8.1 21 39 16 220 160 0.30 0.55 0.85 37 16 400 290 1.57 1100 74 14 42 80 3.5 5.6 80 220 180 116 Max. Units Conditions 82 IC = 8.7A 12 nC VCC = 400V 32 VGE = 15V See Fig. 8 --- TJ = 25C --- ns IC = 8.7A, VCC = 480V 330 VGE = 15V, RG = 22 240 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 1.3 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 8.7A, VCC = 480V --- VGE = 15V, RG = 22 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz 60 ns TJ = 25C See Fig. 14 IF = 12A 120 TJ = 125C 6.0 A TJ = 25C See Fig. 15 VR = 200V 10 TJ = 125C 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt =200As --- A/s TJ = 25C See Fig. --- TJ = 125C 17
CPV363M4F
14 4.10
LOAD CURRENT (A)
10
2.93
8
2.34
6
1.76
4
1.17
2
0.59
0 0.1 1 10 100
0.00
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
T J = 25C
TJ = 150C
10
I C , Collector-to-Emitter Current (A)
T J = 150C
10
T J = 25C
1 1
V G E = 15V 20s PULSE WIDTH
10
A
1 5 6 7
V C C = 50V 5s PULSE WIDTH
8 9
Total Output Power (kW)
A
10
12
T c = 9 0 C T j = 1 25 C P ow er F ac tor = 0 .8 M o d ula tio n D ep th = 1 .15 V c c = 50 % o f R a ted V o lta g e
3.51
V C E , Collector-to-Emitter Voltage (V)
VG E , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
CPV363M4F
20 2.0
VGE = 15V 80 us PULSE WIDTH
V CE, Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
16
1.8
I C =17.4A
1.6
12
8
1.4
I C = 8.7A
4
1.2
I C =4.35A
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
0 25 50 75 100 125 150
T C, Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
T herm al R espo nse (Z thJC )
D = 0.50
1
0.20 0.10 0.05
PD M
0 .1
0.02 0.01 SINGLE PULSE ( THE RMAL RES PO NSE)
Note s: 1. Du ty fac tor D = t 1 /t 2
t
1 t2
0.01 0.0000 1
2. Pe ak TJ = P D M x Z th JC + T C
0.0001
0.001
0.0 1
0.1
1
10
t 1 , R e ct an gu la r P ulse D ura tion (s ec )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
CPV363M4F
2000
1600
VGE, Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 8.7A
16
C, Capacitance (pF)
1200
Cies
12
800
8
400
Coes Cres
4
0 1 10 100
0 0 10 20 30 40 50 60
VCE, Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.90
V CC = 480V V GE = 15V TJ = 25 C 0.88 I C = 8.7A
10
RG = 22Ohm VGE = 15V VCC = 480V IC = 17.4A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.86
IC = 8.7A
1
IC = 4.35A
0.84
0.82
0.80 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( ) C
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
CPV363M4F
4.0
3.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG = Ohm 22 T J = 150 C VCC = 480V VGE = 15V
100
VGE = 20V T J = 125 o C
2.0
10
1.0
SAFE OPERATING AREA
0.0 0 4 8 12 16 20 1 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Insta ntane ous F o rward C urrent - I F (A )
TJ = 150 C
10
TJ = 125 C TJ = 25 C
1 0.4 0.8 1.2 1.6 2.0 2.4
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
F orwa rd V olta ge D rop - V FM (V )
CPV363M4F
160 100
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
120
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
I F = 24 A I F = 1 2A
80
I IR R M - (A )
I F = 2 4A
10
t rr - (n s)
I F = 1 2A IF = 6.0A
I F = 6.0 A
40
0 100
d i f /dt - (A /s)
1000
1 100
1000
di f /dt - (A / s)
Fig. 14 - Typical Reverse Recovery vs. di f/dt
600
Fig. 15 - Typical Recovery Current vs. dif /dt
10000
VR = 2 0 0 V T J = 1 2 5 C TJ = 2 5 C
VR = 2 0 0 V TJ = 1 2 5 C T J = 2 5 C
400
d i(rec)M /dt - (A /s)
1000
Q RR - (nC )
IF = 6.0 A
I F = 2 4A I F = 12 A
I F = 1 2A
100
200
IF = 6.0 A
I F = 2 4A
0 100
di f /dt - (A/ s)
1000
10 100
1000
d i f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. di f/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
CPV363M4F
90% Vge + Vg e
Same t ype device as D.U.T.
V ce
Ic 80% of Vce 430F D.U.T.
10 % Vc e Ic
90% Ic 5% Ic
td (off)
tf
E off =
t1 +5 S V ce ic d t t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon , Eoff(diode), t rr, Qrr, Irr, t d(on), t r, t d(off), t f
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G ATE VO LTA G E D .U .T. 1 0% +V g +V g
trr Ic
Q rr =
trr id dt tx
tx 10% V cc V ce Vcc 10% Ic 9 0% Ic DUT V O LTA G E AN D C URR E NT Ipk Ic
10 % Ir r V cc
V pk Irr
td( on)
tr
5% Vc e t2 E on = V c e ie dt t1 t2 DIO D E RE V E RS E RE C O V ER Y EN ER G Y t3
DIO DE RE CO V E RY W AV E FO RM S
Er ec =
t4 V d id d t t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon , td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Q rr, Irr
CPV363M4F
V g G ATE S IG N AL DE VICE UNDE R TE S T CURR EN T D .U .T.
VO L TA G E IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 10 00V 50V 60 00 F 100 V V c*
D.U.T.
RL = 0 - 480V
480V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
CPV363M4F
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 22 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
Case Outline IMS-2
62.43 (2.458) 3.91 ( .154) 2X 53.85 ( 2.120)
7.87 (.310) 5.46 ( .215)
21.97 (.865)
1
2
3
4
5
6
7
8
9 10 1 1 1 2 13 14 1 5 1 6 17 18 19
0.38 (.015)
NO TE S: 1. Tolerance unless otherwis e spec ified 0.254 (.010) . 2. Controlling D imension: Inch. 3. Dimens ions ar e shown in Millimeter ( Inc hes) . 4. Term inal numbers are shown for refer enc e only.
3.94 (.155) 1.27 ( .050) 3.05 0.38 (.120 .015) 0.76 (.030) 13X 0.51 (.020) 6.10 (.240)
4.06 0.51 (.160 .020) 5.08 (.200) 6X
1.27 (.050) 13X 2.54 (.100) 6X
IMS-2 Package Outline (13 Pins)
D im e n s io n s in M illim e te rs a n d (In c h e s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 1/97

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